Low temperature bumping process

ABSTRACT

A method for low temperature bumping is disclosed. A resin capable of being cross-linked by free-radical or cationic polymerization at low temperature is provided. Electrically conductive particles are then added to the resin to form a mixture. The mixture is then activated by heat or exposure to light to polymerize the mixture. In an alternative embodiment, a vinyl ether resin is used, to which electrically conductive particles are added. The mixture is polymerized by exposure to light.

BACKGROUND

[0001] The thermal conditions to which most electronic devices are subjected may adversely affect those components made out of alternative materials. For example, polymeric ferroelectric random access memory (PFRAM) devices exposed to temperatures of approximately 140 degrees Celsius (° C.) have significantly decreased performance. For example, a process that exposed a PFRAM to 100° C. for 2 hours followed by a ramp up to 125° C. for 7 minutes caused a thirty percent reduction of cells in the device that retained their contents.

[0002] Typically, packaging of electronic components such as microprocessors and other integrated circuits involves high temperatures, especially at the formation of the first level of interconnection. The first level of interconnection is where the integrated circuit is mounted onto the printed circuit board (PCB) so as to allow the integrated circuit to be electrically coupled to the PCB. Some examples of current approaches to the first level of interconnects include wire bonding, which has a typical temperature range of about 140° C. to >200° C., and anisotropic conductive films, which have a typical temperature of 180° C.

BRIEF DESCRIPTION OF THE DRAWINGS

[0003] Embodiments of the invention may be best understood by reading the disclosure with reference to the drawings, wherein:

[0004]FIG. 1 shows a flip chip integrated circuit arrangement relative to a printed circuit board.

[0005]FIG. 2 shows flowchart of a method to produce interconnect bumps.

[0006]FIG. 3 shows a diagram of a molecular structure for a resin.

[0007]FIG. 4 shows an embodiment of a chemical process to form interconnect bumps.

[0008]FIG. 5 shows an alternative embodiment of a chemical process to form interconnect bumps.

[0009]FIG. 6 shows a flowchart of an alternative method to produce interconnect bumps.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0010] The use of polymeric materials as the first level of interconnect between a flip chip and a printed circuit board would allow processing of the chip at a lower temperature. This would have advantages for integrated circuits, such as polymer ferroelectric random access memories (PFRAM) among others, that suffer performance degradation at the higher temperature normally used. ‘Flip chips’ are those integrated circuits that are mounted on the printed circuit board operational side down. The first level of interconnection is where the integrated circuit is mounted onto the printed circuit board (PCB) so as to allow the integrated circuit to be electrically coupled to the PCB, typically through conductive bumps patterned onto the integrated circuit die. FIG. 1 shows a block diagram of an integrated circuit die 10 with it associated interconnect bumps 12 just before being mounted to a printed circuit board 14.

[0011] Polymeric interconnect bumps manufactured from resin systems could be processed at temperatures from room temperature, approximately 23° C., to 150° C., with the majority of the processing temperatures between 100° C. and 150° C. Polymeric bumps may be stencil printed at pitches from 150 μm to 500 μm. The bump heights may range from about 35 μm to 100 μm. However, selection of the materials used in these bumps must be made carefully, as hydrolytic stability issues may cause conductive filler particles to separate.

[0012] A flowchart of an embodiment of a method to manufacture polymeric interconnect bumps is shown in FIG. 2. A resin is selected that may be capable of being cross-linked by free-radical polymerization at 20. Suitable resins include olefin materials having double bond structures, such as materials in the following classes: acrylates, methacrylates, epoxies having olefinic groups, and polyimides having olefinic groups. Resins have the structure as shown in FIG. 3 are suitable.

[0013] In FIG. 3, R1 may be a hydrogen (H) or alkyl of 1 to 4, carbons (C), R is as shown, R2 is a hydrogen or an alkyl group of 1 to 4 carbons, and x can be an integer between 1 to 5. Examples of such resins include, but are not limited to, bis-glycidyl methacrylate (Bis-GMA), ethoxylated bisphenol A (EBPA), etc. As an optional part of the process in FIG. 2, the resin provided in 20 may be blended with reactive diluents at 24 to control viscosity. An example of such diluents includes, but is not limited to, triethylene glycoldimethacrylate (TGMA), etc.

[0014] At 22, electrically conductive particles are added. Examples of materials having the electrically conductive properties include, but are not limited to, silver, tin, indium, bismuth, palladium, platinum, nickel, copper and zinc. The particles may be added in spherical or irregularly shaped form, having high hardness and particle size in the range of about 0.1 μm to 100 μm. Concentration of electrically conductive particles may be in the range of about 50 to 200% by weight, particle to resin, and electrically conductive paste (ECP) viscosity may be in the range 1000 to 100000 cPS at room temperature allowing for patterning and formation of a face-centered bump structure via stencil printing or other similar means. ECP viscosity can be adjusted as needed in accordance with processing temperature, noting that applications requiring elevated processing temperatures will be formulated to have relatively high room temperature viscosity because it will tend to decease as temperature is elevated.

[0015] A suitable formulation could be a resin blend of 10% bis-GMA, 25% TGMA, 30% EBPA; the mixture having a 35 to 50% resin blend, 0.5 to 1.5% benzoyl peroxide (BPO), 0.01 to 0.05% butylated hydroxoytoluene (BHT), and 65 to 50% conductive filler particle. The mixture would then be polymerized at 26 after being applied to the integrated circuit die. Several different options for polymerization may be available.

[0016] Polymerization of the mixture can be initiated by introducing the mixture to 40° C. to 100° C. In this embodiment, the bumps would be applied to the die at 261 and then baked at 262. In order to speed up the reaction 0.01 to 1% N,N-Bis(2-hydroxyethyl)-p-toluidine (NNHET) can be added as an activator at 266. Incorporation of NNHET will allow for cure in the temperature of room temperature (˜23° C.) and greater at 268. However, using a material that cures are room temperature will require that the bumps being applied at 267 almost immediately after NNHET is added at 266. Application of the mixture to the die could be done in several ways, such as stencil printing the bumps prior to the curing.

[0017] In an alternative embodiment using the electrically conductive polymeric paste material of the resin system and formulation disclosed above, BPO and NNHET are replaced by photo-initiator systems at 263. Suitable photo-initiators include benzyl, camphorquinone, fluorenone, α-napththil. Such photo-initiated systems can be formulated so as to use UV and/or visible light. The mixture would then be exposed to light at 265, after being applied to the integrated circuit die at 264, such as by stencil printing.

[0018] An alternative embodiment of a photopolymerizable system employing cationic polymerization is shown in FIG. 4. Vinyl ether based resins are well known to be cross linked via cations. A vinyl ether system may be as shown in 30, with R having the same definition as set out in FIG. 3. Cations can be generated via thermally degradation of appropriate precursors, or via generation of the same using photo initiated process. Suitable examples of thermally activated acid generators include, but are not limited to, hydroxamic acids esters, diazosulfonates, etc. These degrade at temperatures around but less than 100° C., resulting in acids that catalyze the cross linking of the resin system.

[0019] At 30, the vinyl ether resin would be combined with the thermally activated acid generators, the bumps applied at 32 and then the bumps heated at 34. Examples of thermally activated acid generators include hydroxamic acid esters and diazosulfonates. This would result in the structure as shown in 38. A conductive filler adhesion promoter could be added as an optional part of the process prior to applying the bumps.

[0020] Proceeding from 30 to 36, light would be used to promote the polymerization. Photo-initiators would be added at 30, the bumps applied at 32 and then exposed to light at 36. Examples of some photo-initiators include iodonium and sulfonium salts, o-nitrobenzyl esters etc. Photo-initiated systems can be formulated so as to use UV and/or visible light.

[0021] Other alternatives to acrylates/methacrylate systems that could be crosslinked via free radical mechanism are electron donor/acceptor based systems. One example of such a system may be a maleimides/vinyl ether based system. Here maleimides are the electron acceptors, while the vinyl ethers form the donors. Thus in the presence of photo-initiated radicals, the maleimides react with vinyl ethers thus starting the polymerization, resulting in cross linked network. This can be seen in FIG. 5. The top molecule would be the maleimide molecule that may be then added to the vinyl ether, the middle molecule at 40. The photo-initiator may be then added. Once the bulk mixture is completed, the bumps are applied at 42. The mixture exposed to light after application on the die and this results in the bumps having the structure shown at 44.

[0022] A simple formulation would entail, mixing 1:1 maleimide/vinyl ether resin system, to which 1-3 wt % of a photo-initiator, such as BPO, or keto phosphine oxide systems are added. To this conductive filler ranging anywhere from 50 to 90 wt % may be added: The mixture may be stencil printed and exposed to UV light. In the exposed areas, radicals are generated and the material starts to crosslink, thus forming the polymer bumps.

[0023] In this manner, polymer bumps are formed on an integrated circuit die. A flowchart for an embodiment of a method to manufacture polymer bumps by photo polymerization is shown in FIG. 6. At 50, a vinyl ether resin may be provided.

[0024] This may be for the cation cross linking process shown in FIG. 4 or the maleimides system shown in FIG. 5. For the cation cross linking process, thermally activated acid inducers or photo-initiators may be added. For the maleimides system of FIG. 5, both a maleimide and a photo-initiator would be added as part of the process 50.

[0025] At 52 the electrically conductive particles are added to the resin mixture. Photo-initiators are then added at 54. The mixture would be applied to the die at 56, such as by stencil printing, and exposed to light at 58. This provides electrically conductive polymer bumps on the die that can be processed at temperatures lower than conventional bumping processes, preventing injury to integrated circuits manufactured out of temperature sensitive materials.

[0026] Generally, the embodiments of the invention may result in interconnections having lower residual stress. This is because stress, σ=Δα·ΔT·E; where Δα=difference in coefficient of thermal expansion (CTE), ΔT=difference in temperature, E=modulus. In embodiments of the above processes, the polymeric materials resulting have modulus in the range of about 10 to 50 times smaller that metallic counter parts and ΔT has been substantially decreased. The maximum temperature for curing the material will typically be in a range of about 40° C. to 150° C. The range of stress values for this temperature range is about 0.0034 giga Pascals (GPa, 1×10⁹ Pascals) to 0.02813 GPa,

[0027] It may be possible that these processes could be adapted to utilize benzocyclobutene (BCB), which has some unique properties that may provide mechanical advantages for flip chip structures. The process may result in electrically conductive BCB. The use of BCB in such a system would form low modulus and therefore high compliance no-lead bumps that provide improved stress distribution and bump fatigue. BCB has a glass transition temperature greater that the expected service temperature thus allowing for essentially linear mechanical behavior through out the device's anticipated service environment. The BCB could be used in any of the embodiments disclosed above and in other variations and modifications of embodiments of the invention.

[0028] Thus, although there has been described to this point a particular embodiment for a method and apparatus for a low temperature bumping process, it is not intended that such specific references be considered as limitations upon the scope of this invention except in-so-far as set forth in the following claims. 

What is claimed is:
 1. A method of forming electrically conductive polymeric bumps, comprising: providing a resin capable of being cross-linked by free-radical polymerization; adding electrically conductive particles to the resin, forming a mixture; curing the mixture to form interconnect bumps.
 2. The method of claim 1 further comprising blending reactive diluents with the resin.
 3. The method of claim 2 blending reactive diluents further comprising blending tiethylene glycoldimethacrylate with the resin.
 4. The method of claim 1 adding electrically conductive particles further comprising adding electrically conductive particles of a shape selected from the group comprising: irregular and spherical.
 5. The method of claim 1 forming a mixture further comprising forming a concentration of electrically conductive particles in the range of about 50 percent to 200 percent to the concentration of resin by weight.
 6. The method of claim 1 forming a mixture further comprising forming a mixture having a viscosity of 1000 to 10000 cPS.
 7. The method of claim 1 forming a mixture further comprising forming a mixture having a formulation of resin concentration in the range of about 35 to 50 percent, 0.5 to 1.5 percent benzoyl peroxide, 0.01 to 0.05 butylated hydroxoytoluene, and 50 to 65 percent conductive particles.
 8. The method of claim 7 providing a resin further comprising providing a blend of 10 percent bis-glycidyl methacrylate, 25 percent triethylene glycoldimethacrylate, and 30 percent ethoxylated bisphenaol A.
 9. The method of claim 1 curing the mixture further comprising heating the mixture to a temperature in a range of about 40 to 100 degrees Celsius.
 10. The method of claim 1 curing the mixture further comprising: introducing N, N-Bis(2-hydroxyehtyl)-p-toluidine (NNHET); and curing the mixture at a temperature substantially equal to 23 degrees Celsius.
 11. The method of claim 1 forming a mixture further comprising adding a photo-initiator to the mixture.
 12. The method of claim 11 adding a photo-initiator further comprising adding a photo-initiator selected from the group comprised of: camphorquinone, fluorenone and α-napththil.
 13. The method of claim 11 curing the mixture further comprising exposing the mixture to light.
 14. A method of forming electrically conductive polymeric bumps, comprising: providing a vinyl ether resin; adding electrically conductive particles to the resin, forming a mixture; introducing a photo-initiator to the mixture; and exposing the mixture to light causing the mixture to cure into interconnect bumps.
 15. The method of claim 14 providing a resin further comprising providing a blend of vinyl ether resin and maleimides.
 16. The method of claim 14 providing a resin further comprising providing a formulation of 1:1 maleimide to vinyl ether resin, a photo-initiator in the range of about 1-3 percent by weight, and the electrically conductive particles in the range of about 50 to 90 percent by weight.
 17. The method of claim 16 providing a resin further comprising providing a photo-initiator selected from the group comprising: benzoyl peroxide, and keto phosphine oxide.
 18. The method of claim 14 exposing the mixture to light further comprising exposing the mixture to light having a wavelength in a range selected from the group comprising: the visible range and the ultraviolet range
 19. The method of claim 14 providing a resin further comprising providing a blend of vinyl ether resin and a thermally activated acid generator.
 20. The method of claim 19 providing a resin further comprising providing a thermally activated acid generator selected from the group comprised of: hydroxamic acids esters, and diazosulfonates.
 21. The method of claim 17 providing a resin further comprising providing a photo-initiator selected from the group comprised of: iodonium, sulfonium salts, o-nitrobenzyl esters.
 22. An electrically conductive paste, comprising: a resin capable of being cross-linked by free-radical polymerization; electrically conductive filler particles dispersed in the resin.
 23. The paste of claim 24, wherein the resin is selected from one of the group comprised of: bis-glycidyl methacrylate, and etholxylated bisphenol A.
 24. The paste of claim 24, wherein the resin is selected from one of a class of materials comprised of: acrylates, methacrylates, epoxies having olefinic groups, and polyimides having olefinic groups.
 25. The paste of claim 24, wherein the electrically conductive filler particles are selected from one of the group comprised of: silver, tin, indium, bismuth, nickel, copper, zinc
 26. A method of forming electrically conductive polymeric bumps, comprising: providing a vinyl ether resin; adding electrically conductive particles to the resin, forming a mixture; introducing a thermal acid to the mixture; and heating the mixture to cure into interconnect bumps.
 27. The method of claim 26, wherein introducing a thermal acid further comprises introducing a thermal acid selected from the group comprising: hydroxamic acid esters and diazosulfonates.
 28. A device, comprising: a first surface; bumps formed on the first surface, wherein the bumps further comprise bumps of electrically conductive paste polymerized by free-radical polymerization.
 29. The device of claim 28, wherein the bumps further comprise bumps of electrically conductive paste cured by application of one of the group comprising: beat and light.
 30. The device of claim 28, wherein interconnections formed from the bumps have a residual stress in the range of about 0.0034 GPa to 0.02813 GPa. 